Infineon OptiMOS 3 N-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD031N03LGBTMA1

RS Stock No.:: 754-5446
Mfr. Part No.:: IPD031N03LGBTMA1
Brand:: Infineon

Infineon OptiMOS 3 N-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD031N03LGBTMA1

Bulk discount available

Subtotal (1 pack of 5 units)*

Kr.59 68

(exc. VAT)

Kr.74 60

(inc. VAT)

Stock information currently inaccessible

Units	Per unit	Per Pack*
5 - 45	Kr. 11,936	Kr. 59,68
50 - 120	Kr. 10,98	Kr. 54,90
125 - 245	Kr. 10,328	Kr. 51,64
250 - 495	Kr. 9,48	Kr. 47,40
500 +	Kr. 8,74	Kr. 43,70

*price indicative

RS Stock No.:: 754-5446
Mfr. Part No.:: IPD031N03LGBTMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	90 A
	Maximum Drain Source Voltage	30 V
	Package Type	DPAK (TO-252)
	Series	OptiMOS 3
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	4.4 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	94 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	6.22mm
	Transistor Material	Si
	Typical Gate Charge @ Vgs	25 nC @ 4.5 V
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Length	6.73mm
	Minimum Operating Temperature	-55 °C
	Height	2.41mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 90 A
	Maximum Drain Source Voltage 30 V
	Package Type DPAK (TO-252)
	Series OptiMOS 3
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 4.4 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 94 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 6.22mm
	Transistor Material Si
	Typical Gate Charge @ Vgs 25 nC @ 4.5 V
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Length 6.73mm
	Minimum Operating Temperature -55 °C
	Height 2.41mm

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OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

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N-channel, logic level
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Pb-free plating

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS 3 N-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD031N03LGBTMA1

Infineon OptiMOS™3 Power MOSFETs, up to 40V

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