Infineon OptiMOS 3 N-Channel MOSFET, 100 A, 75 V, 3-Pin TO-220 IPP034NE7N3GXKSA1

RS Stock No.:: 857-6833
Mfr. Part No.:: IPP034NE7N3GXKSA1
Brand:: Infineon

Infineon OptiMOS 3 N-Channel MOSFET, 100 A, 75 V, 3-Pin TO-220 IPP034NE7N3GXKSA1

Bulk discount available

Subtotal (1 tube of 500 units)*

Kr.9 210 00

(exc. VAT)

Kr.11 510 00

(inc. VAT)

Stock information currently inaccessible

Units	Per unit	Per Tube*
500 - 500	Kr. 18,42	Kr. 9 210,00
1000 - 2000	Kr. 16,836	Kr. 8 418,00
2500 +	Kr. 16,394	Kr. 8 197,00

*price indicative

RS Stock No.:: 857-6833
Mfr. Part No.:: IPP034NE7N3GXKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	100 A
	Maximum Drain Source Voltage	75 V
	Package Type	TO-220
	Series	OptiMOS 3
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	3.4 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.8V
	Minimum Gate Threshold Voltage	2.3V
	Maximum Power Dissipation	214 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	88 nC @ 10 V
	Length	10.36mm
	Maximum Operating Temperature	+175 °C
	Number of Elements per Chip	1
	Width	4.57mm
	Transistor Material	Si
	Minimum Operating Temperature	-55 °C
	Height	15.95mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 100 A
	Maximum Drain Source Voltage 75 V
	Package Type TO-220
	Series OptiMOS 3
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 3.4 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.8V
	Minimum Gate Threshold Voltage 2.3V
	Maximum Power Dissipation 214 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 88 nC @ 10 V
	Length 10.36mm
	Maximum Operating Temperature +175 °C
	Number of Elements per Chip 1
	Width 4.57mm
	Transistor Material Si
	Minimum Operating Temperature -55 °C
	Height 15.95mm

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS 3 N-Channel MOSFET, 100 A, 75 V, 3-Pin TO-220 IPP034NE7N3GXKSA1

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

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