Infineon OptiMOS 3 Type N-Channel MOSFET, 120 A, 75 V Enhancement, 3-Pin TO-263 IPB020NE7N3GATMA1

RS Stock No.:: 825-9213
Mfr. Part No.:: IPB020NE7N3GATMA1
Brand:: Infineon

Infineon OptiMOS 3 Type N-Channel MOSFET, 120 A, 75 V Enhancement, 3-Pin TO-263 IPB020NE7N3GATMA1

Bulk discount available

Subtotal (1 pack of 5 units)*

Kr.296 23

(exc. VAT)

Kr.370 29

(inc. VAT)

FREE delivery for online orders over 500,00 kr

In Stock

Plus 255 unit(s) shipping from 29. desember 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
5 - 5	Kr. 59,246	Kr. 296,23
10 - 20	Kr. 56,284	Kr. 281,42
25 - 45	Kr. 53,906	Kr. 269,53
50 - 120	Kr. 50,358	Kr. 251,79
125 +	Kr. 47,408	Kr. 237,04

*price indicative

RS Stock No.:: 825-9213
Mfr. Part No.:: IPB020NE7N3GATMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	120A
	Maximum Drain Source Voltage Vds	75V
	Package Type	TO-263
	Series	OptiMOS 3
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	2mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	0.9V
	Maximum Power Dissipation Pd	300W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	155nC
	Maximum Operating Temperature	175°C
	Width	9.45 mm
	Standards/Approvals	No
	Length	10.31mm
	Height	4.57mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 120A
	Maximum Drain Source Voltage Vds 75V
	Package Type TO-263
	Series OptiMOS 3
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 2mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 0.9V
	Maximum Power Dissipation Pd 300W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 155nC
	Maximum Operating Temperature 175°C
	Width 9.45 mm
	Standards/Approvals No
	Length 10.31mm
	Height 4.57mm
	Automotive Standard No

RoHS Status: Not Applicable

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS

Optimized technology for DC/DC converters

Qualified according to JEDEC1) for target applications

N-channel, logic level

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Pb-free plating

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS 3 Type N-Channel MOSFET, 120 A, 75 V Enhancement, 3-Pin TO-263 IPB020NE7N3GATMA1

FREE delivery for online orders over 500,00 kr

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

MOSFET Transistors, Infineon

Related links