Infineon OptiMOS 3 Type N-Channel MOSFET, 120 A, 60 V Enhancement, 3-Pin TO-220 IPP032N06N3GXKSA1
- RS Stock No.:
- 892-2100
- Mfr. Part No.:
- IPP032N06N3GXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
Kr.112 06
(exc. VAT)
Kr.140 075
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 40 unit(s) shipping from 29. desember 2025
- Plus 155 unit(s) shipping from 05. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | Kr. 22,412 | Kr. 112,06 |
| 25 - 45 | Kr. 19,746 | Kr. 98,73 |
| 50 - 120 | Kr. 18,372 | Kr. 91,86 |
| 125 - 245 | Kr. 17,046 | Kr. 85,23 |
| 250 + | Kr. 15,902 | Kr. 79,51 |
*price indicative
- RS Stock No.:
- 892-2100
- Mfr. Part No.:
- IPP032N06N3GXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | OptiMOS 3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 188W | |
| Typical Gate Charge Qg @ Vgs | 124nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.36mm | |
| Height | 15.95mm | |
| Width | 4.57 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series OptiMOS 3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 188W | ||
Typical Gate Charge Qg @ Vgs 124nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 10.36mm | ||
Height 15.95mm | ||
Width 4.57 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS™ 3 N-Channel MOSFET 60 V, 3-Pin TO-220 IPP032N06N3GXKSA1
- STMicroelectronics DeepGate 120 A 3-Pin TO-220 STP260N6F6
- Infineon OptiMOS™ 5 N-Channel MOSFET 60 V, 3-Pin TO-220 IPP020N06NAKSA1
- onsemi PowerTrench N-Channel MOSFET 313 A 3-Pin TO-220 FDP020N06B_F102
- onsemi PowerTrench N-Channel MOSFET 193 A 3-Pin TO-220 FDP030N06
- Infineon OptiMOS™ 3 N-Channel MOSFET 60 V, 3-Pin D2PAK IPB029N06N3GATMA1
- Infineon OptiMOS™ -T2 N-Channel MOSFET 60 V, 3-Pin D2PAK IPB120N06S4H1ATMA2
- Vishay N-Channel MOSFET 60 V, 3-Pin TO-220AB SUP50020E-GE3