Infineon OptiMOS 3 Type N-Channel MOSFET, 120 A, 100 V Enhancement, 3-Pin TO-263 IPB027N10N3GATMA1

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Subtotal (1 pack of 2 units)*

Kr.62 69 

(exc. VAT)

Kr.78 362 

(inc. VAT)

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Per unit
Per Pack*
2 +Kr. 31,345Kr. 62,69

*price indicative

Packaging Options:
RS Stock No.:
825-9235
Mfr. Part No.:
IPB027N10N3GATMA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS 3

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

4.5mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

300W

Typical Gate Charge Qg @ Vgs

155nC

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Height

4.57mm

Standards/Approvals

No

Length

10.31mm

Width

9.45 mm

Automotive Standard

No

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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