onsemi UniFET N-Channel MOSFET, 52 A, 200 V Enhancement, 3-Pin TO-263 FDB52N20TM
- RS Stock No.:
- 759-8983
- Mfr. Part No.:
- FDB52N20TM
- Brand:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
Kr. 132,93
(exc. VAT)
Kr. 166,16
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Supply shortage
- 800 left, ready to ship
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | Kr. 26,586 | Kr. 132,93 |
| 50 - 95 | Kr. 22,926 | Kr. 114,63 |
| 100 - 495 | Kr. 19,882 | Kr. 99,41 |
| 500 + | Kr. 17,434 | Kr. 87,17 |
*price indicative
- RS Stock No.:
- 759-8983
- Mfr. Part No.:
- FDB52N20TM
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 52A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Series | UniFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 49mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 357W | |
| Typical Gate Charge Qg @ Vgs | 49nC | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.572mm | |
| Width | 10.16mm | |
| Standards/Approvals | No | |
| Length | 9.98mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 52A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Series UniFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 49mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 357W | ||
Typical Gate Charge Qg @ Vgs 49nC | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Height 4.572mm | ||
Width 10.16mm | ||
Standards/Approvals No | ||
Length 9.98mm | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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