onsemi UltraFET N-Channel MOSFET, 24 A, 150 V Enhancement, 8-Pin PQFN-8 FDMS2572
- RS Stock No.:
- 759-9140
- Mfr. Part No.:
- FDMS2572
- Brand:
- onsemi
Get a bulk buy discount
Add 20 more to save Kr. 108,70
View bulk pricing optionsSubtotal (1 pack of 2 units)*
Kr. 78,71
(exc. VAT)
Kr. 98,39
(inc. VAT)
FREE delivery for online orders over 750,00 kr
Supply shortage
- 1 588 left, ready to ship
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Pack* | Saving |
|---|---|---|---|
| 2 - 18 | Kr. 39,355 | Kr. 78,71 | - |
| 20 - 198 | Kr. 33,92 | Kr. 67,84 | Kr. 108,70 |
| 200 - 998 | Kr. 29,46 | Kr. 58,92 | Kr. 1 979,00 |
| 1000 - 1998 | Kr. 25,795 | Kr. 51,59 | Kr. 13 560,00 |
| 2000 + | Kr. 23,45 | Kr. 46,90 | Kr. 31 810,00 |
*price indicative
- RS Stock No.:
- 759-9140
- Mfr. Part No.:
- FDMS2572
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | UltraFET | |
| Package Type | PQFN-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 103mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 78W | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Width | 6mm | |
| Height | 750μm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series UltraFET | ||
Package Type PQFN-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 103mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 78W | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Standards/Approvals No | ||
Width 6mm | ||
Height 750μm | ||
Automotive Standard No | ||
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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