onsemi UltraFET Type N-Channel MOSFET, 24 A, 150 V Enhancement, 8-Pin PQFN-8 FDMS2572

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Subtotal (1 pack of 2 units)*

Kr.39 08 

(exc. VAT)

Kr.48 84 

(inc. VAT)

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Our current stock is limited and our suppliers are expecting shortages.
Units
Per unit
Per Pack*
2 - 18Kr. 19,54Kr. 39,08
20 - 198Kr. 16,84Kr. 33,68
200 - 998Kr. 14,595Kr. 29,19
1000 - 1998Kr. 12,86Kr. 25,72
2000 +Kr. 11,715Kr. 23,43

*price indicative

Packaging Options:
RS Stock No.:
759-9140
Mfr. Part No.:
FDMS2572
Brand:
onsemi
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Brand

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

150V

Package Type

PQFN-8

Series

UltraFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

103mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

31nC

Maximum Power Dissipation Pd

78W

Maximum Operating Temperature

150°C

Length

5mm

Standards/Approvals

No

Width

6 mm

Height

0.75mm

Automotive Standard

No

UltraFET® MOSFET, Fairchild Semiconductor


UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.

Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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