Toshiba 2SK N-Channel MOSFET, 1 A, 30 V, 3-Pin SC-62 2SK3074(TE12L,F)
- RS Stock No.:
- 760-3132
- Mfr. Part No.:
- 2SK3074(TE12L,F)
- Brand:
- Toshiba
Bulk discount available
Subtotal (1 unit)*
Kr.39 11
(exc. VAT)
Kr.48 89
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- 264 unit(s) shipping from 08. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | Kr. 39,11 |
| 10 - 24 | Kr. 36,04 |
| 25 - 49 | Kr. 33,60 |
| 50 - 99 | Kr. 31,06 |
| 100 + | Kr. 28,51 |
*price indicative
- RS Stock No.:
- 760-3132
- Mfr. Part No.:
- 2SK3074(TE12L,F)
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | 2SK | |
| Package Type | SC-62 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.4V | |
| Maximum Power Dissipation | 3 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | +25 V | |
| Width | 2.5mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Length | 4.6mm | |
| Number of Elements per Chip | 1 | |
| Typical Power Gain | 14.9 dB | |
| Height | 1.6mm | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 1 A | ||
Maximum Drain Source Voltage 30 V | ||
Series 2SK | ||
Package Type SC-62 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.4V | ||
Maximum Power Dissipation 3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +25 V | ||
Width 2.5mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 4.6mm | ||
Number of Elements per Chip 1 | ||
Typical Power Gain 14.9 dB | ||
Height 1.6mm | ||
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