onsemi BSS138K Type N-Channel MOSFET, 220 mA, 50 V Enhancement, 3-Pin SOT-23 BSS138K
- RS Stock No.:
- 761-4401
- Distrelec Article No.:
- 304-45-643
- Mfr. Part No.:
- BSS138K
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 100 units)*
Kr.92 00
(exc. VAT)
Kr.115 00
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- 200 unit(s) ready to ship
- Plus 10 100 unit(s) shipping from 26. januar 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 100 - 400 | Kr. 0,92 | Kr. 92,00 |
| 500 - 900 | Kr. 0,794 | Kr. 79,40 |
| 1000 + | Kr. 0,688 | Kr. 68,80 |
*price indicative
- RS Stock No.:
- 761-4401
- Distrelec Article No.:
- 304-45-643
- Mfr. Part No.:
- BSS138K
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 220mA | |
| Maximum Drain Source Voltage Vds | 50V | |
| Series | BSS138K | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Typical Gate Charge Qg @ Vgs | 2.4nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 350mW | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.3 mm | |
| Height | 0.93mm | |
| Standards/Approvals | No | |
| Length | 2.92mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 220mA | ||
Maximum Drain Source Voltage Vds 50V | ||
Series BSS138K | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.5Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Typical Gate Charge Qg @ Vgs 2.4nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 350mW | ||
Maximum Operating Temperature 150°C | ||
Width 1.3 mm | ||
Height 0.93mm | ||
Standards/Approvals No | ||
Length 2.92mm | ||
Automotive Standard AEC-Q101 | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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