Renesas P-Channel MOSFET, 30 A, 60 V, 4-Pin IPAK 2SJ598-AZ

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Subtotal 40 units (supplied in a bag)*

Kr.183 04 

(exc. VAT)

Kr.228 80 

(inc. VAT)

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Units
Per unit
40 - 190Kr. 4,576
200 - 490Kr. 4,207
500 - 990Kr. 4,148
1000 +Kr. 4,038

*price indicative

Packaging Options:
RS Stock No.:
772-5251P
Mfr. Part No.:
2SJ598-AZ
Brand:
Renesas Electronics
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Brand

Renesas Electronics

Channel Type

P

Maximum Continuous Drain Current

30 A

Maximum Drain Source Voltage

60 V

Package Type

IPAK (TO-251)

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

23 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

7mm

Number of Elements per Chip

1

Transistor Material

Si

Typical Gate Charge @ Vgs

15 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

6.5mm

Height

2.3mm

P-Channel MOSFET, Renesas Electronics (NEC)



MOSFET Transistors, Renesas Electronics (NEC)