N-Channel MOSFET Transistor, 10.2 A, 600 V, 3-Pin DPAK Fairchild FCD380N60E

Bulk discount available

Subtotal 25 units (supplied on a continuous strip)*

Kr.434 85 

(exc. VAT)

Kr.543 55 

(inc. VAT)

Add to Basket
Select or type quantity
Stock information currently inaccessible
Units
Per unit
25 - 120Kr. 17,394
125 - 245Kr. 15,21
250 - 495Kr. 13,65
500 +Kr. 12,48

*price indicative

Packaging Options:
RS Stock No.:
774-1137P
Mfr. Part No.:
FCD380N60E
Brand:
Fairchild Semiconductor
Find similar products by selecting one or more attributes.
Select all

Brand

Fairchild Semiconductor

Channel Type

N

Maximum Continuous Drain Current

10.2 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

380 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

106 W

Maximum Gate Source Voltage

+30 V

Maximum Operating Temperature

+150 °C

Width

6.22mm

Typical Gate Charge @ Vgs

34 nC @ 10 V

Length

6.73mm

Number of Elements per Chip

1

Height

2.39mm

Minimum Operating Temperature

-55 °C

SuperFET® and SuperFET® II N-Channel MOSFET, Fairchild Semiconductor


Fairchild added the SuperFET® II high-voltage power MOSFET family using the Super Junction Technology. It provides best-in-class robust body diode performance in AC-DC Switch Mode Power Supplies (SMPS) applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, lighting applications, which require high power density, system efficiency and reliability.
Utilizing an advanced charge balance technology, designers achieve more efficient, cost-effective and high performance solutions that take up less board space and improve reliability.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.