onsemi Isolated 2 N-Channel Small Signal, 250 mA, 30 V Enhancement, 6-Pin SC-88 NTJD4001NT1G
- RS Stock No.:
- 780-0608
- Mfr. Part No.:
- NTJD4001NT1G
- Brand:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (50 units, in packs of 50)*
Kr. 147,10
(exc. VAT)
Kr. 183,90
(inc. VAT)
FREE delivery for online orders over 750,00 kr
In Stock
- Plus 50 unit(s) shipping from 28 September 2026
- Plus 18 650 unit(s) shipping from 05 October 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 550 | Kr. 2,942 | Kr. 147,10 |
| 600 - 1450 | Kr. 1,773 | Kr. 88,65 |
| 1500 + | Kr. 1,364 | Kr. 68,20 |
*price indicative
- RS Stock No.:
- 780-0608
- Mfr. Part No.:
- NTJD4001NT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Product Type | Small Signal | |
| Maximum Continuous Drain Current Id | 250mA | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 2.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.65V | |
| Typical Gate Charge Qg @ Vgs | 0.9nC | |
| Maximum Gate Source Voltage Vgs | -20, +20V | |
| Maximum Power Dissipation Pd | 2.72W | |
| Maximum Operating Temperature | +150°C | |
| Transistor Configuration | Isolated | |
| Standards/Approvals | No | |
| Length | 2.2mm | |
| Width | 1.35mm | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Product Type Small Signal | ||
Maximum Continuous Drain Current Id 250mA | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 2.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.65V | ||
Typical Gate Charge Qg @ Vgs 0.9nC | ||
Maximum Gate Source Voltage Vgs -20, +20V | ||
Maximum Power Dissipation Pd 2.72W | ||
Maximum Operating Temperature +150°C | ||
Transistor Configuration Isolated | ||
Standards/Approvals No | ||
Length 2.2mm | ||
Width 1.35mm | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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