Infineon HEXFET N-Channel MOSFET, 38 A, 300 V, 3-Pin TO-247AC IRFP4137PBF

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Packaging Options:
RS Stock No.:
784-8944
Mfr. Part No.:
IRFP4137PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

300 V

Package Type

TO-247AC

Series

HEXFET

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

69 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

341 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

16.13mm

Typical Gate Charge @ Vgs

83 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

5.2mm

Transistor Material

Si

Forward Diode Voltage

1.3V

Height

21.1mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
MX

Motor Control and AC-DC Synchronous Rectifier MOSFET, Infineon


Motor Control MOSFET


Infineon offers a comprehensive portfolio of rugged N-channel and P-channel MOSFET devices for motor control applications.

Synchronous Rectifier MOSFET


A portfolio of synchronous rectification MOSFET devices for AC-DC power supplies supports the customer demands for higher power density, smaller size, more portability and more flexible systems.

Infineon HEXFET Series MOSFET, 38A Maximum Continuous Drain Current, 341W Maximum Power Dissipation - IRFP4137PBF


This N-channel MOSFET is designed for high power applications, handling continuous drain currents up to 38A while accommodating a maximum drain-source voltage of 300V. Its enhancement mode configuration provides enhanced efficiency and performance in electronic circuits, making it a key component for various industrial uses. The MOSFET is robust and ensures dependable operation in challenging conditions.

Features & Benefits


• High efficiency synchronous rectification contributes to energy savings
• Improved gate, avalanche, and dynamic ruggedness enhance durability
• Low Rds(on) rating minimises power loss during operation
• Thermal performance withstands temperatures up to +175°C

Applications


• Utilised for synchronous rectification in switched-mode power supplies
• Suitable for hard switching and high-frequency circuit designs
• Employed in uninterruptible power supply systems for enhanced reliability

What is the maximum gate-source voltage allowable for safe operation?


The device can safely handle a maximum gate-source voltage of ±20V, ensuring compatibility in various applications.

How can this device be effectively cooled in high power applications?


Effective cooling can be achieved by applying a suitable heat sink and ensuring proper airflow to maintain junction temperatures within 175°C during operation.

What kind of circuit configurations can this MOSFET support?


It is suitable for single transistor configurations, enabling integration into diverse circuit designs with high efficiency.

What happens to the performance at higher temperatures?


At elevated temperatures, the continuous drain current rating decreases

at 100°C, it is rated for 27A compared to 38A at 25°C.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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