STMicroelectronics STripFET H7 Type N-Channel MOSFET, 180 A, 100 V Enhancement, 3-Pin H2PAK
- RS Stock No.:
- 786-3707P
- Mfr. Part No.:
- STH310N10F7-2
- Brand:
- STMicroelectronics
Subtotal 2 units (supplied on a continuous strip)*
Kr. 89,60
(exc. VAT)
Kr. 112,00
(inc. VAT)
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In Stock
- 4 208 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 2 + | Kr. 44,80 |
*price indicative
- RS Stock No.:
- 786-3707P
- Mfr. Part No.:
- STH310N10F7-2
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 180A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | STripFET H7 | |
| Package Type | H2PAK | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Maximum Power Dissipation Pd | 315W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.8mm | |
| Height | 4.8mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 180A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series STripFET H7 | ||
Package Type H2PAK | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Maximum Power Dissipation Pd 315W | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Length 15.8mm | ||
Height 4.8mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel STripFET™ H7 Series, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.