N-Channel MOSFET, 18 A, 100 V, 8-Pin SOIC Vishay SI4190ADY-T1-GE3

RS Stock No.:: 787-9235P
Mfr. Part No.:: SI4190ADY-T1-GE3
Brand:: Vishay

N-Channel MOSFET, 18 A, 100 V, 8-Pin SOIC Vishay SI4190ADY-T1-GE3

2100 In stock for same day dispatch

Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

Kr. 6,844

(exc. VAT)

Kr. 8,555

(inc. VAT)

Units	Per unit
5 +	Kr. 6,844

RS Stock No.:: 787-9235P
Mfr. Part No.:: SI4190ADY-T1-GE3
Brand:: Vishay

Si4190ADY, N-Channel 100V (Drain-Source) MOSFET Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	18 A
Maximum Drain Source Voltage	100 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	2.2 Ω
Channel Mode	Enhancement
Minimum Gate Threshold Voltage	1.5V
Maximum Power Dissipation	6 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Width	4mm
Transistor Material	Si
Typical Gate Charge @ Vgs	44.4 nC @ 10 V
Length	5mm
Maximum Operating Temperature	+150 °C
Height	1.5mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 18 A, 100 V, 8-Pin SOIC Vishay SI4190ADY-T1-GE3

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor