Vishay SQ Rugged Type N-Channel TrenchFET Power MOSFET, 25 A, 60 V Enhancement, 3-Pin TO-252 SQD25N06-22L_GE3
- RS Stock No.:
- 787-9480
- Mfr. Part No.:
- SQD25N06-22L_GE3
- Brand:
- Vishay
Subtotal (1 pack of 5 units)*
Kr.115 32
(exc. VAT)
Kr.144 15
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Plus 30 unit(s) shipping from 29. desember 2025
- Final 1 880 unit(s) shipping from 05. januar 2026
Units | Per unit | Per Pack* |
|---|---|---|
| 5 + | Kr. 23,064 | Kr. 115,32 |
*price indicative
- RS Stock No.:
- 787-9480
- Mfr. Part No.:
- SQD25N06-22L_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | TrenchFET Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SQ Rugged | |
| Package Type | TO-252 | |
| Mount Type | PCB | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.022Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 50nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 62W | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22 mm | |
| Height | 2.38mm | |
| Length | 6.73mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2002/95/EC | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type TrenchFET Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SQ Rugged | ||
Package Type TO-252 | ||
Mount Type PCB | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.022Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 50nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 62W | ||
Maximum Operating Temperature 175°C | ||
Width 6.22 mm | ||
Height 2.38mm | ||
Length 6.73mm | ||
Standards/Approvals IEC 61249-2-21, RoHS 2002/95/EC | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, Automotive SQ Rugged Series, Vishay Semiconductor
The SQ series of MOSFETs from Vishay Semiconductor are designed for all automotive applications requiring ruggedness and high reliability.
Advantages of SQ Rugged Series MOSFETs
• AEC-Q101 qualified
• Junction temperature up to +175°C
• Low on-resistance n- and p-channel TrenchFET® technologies
• Innovative space-saving package options
MOSFET Transistors, Vishay Semiconductor
Approvals
AEC-Q101
Related links
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