DiodesZetex DMN6040SK3 Type N-Channel MOSFET, 20 A, 60 V Enhancement, 3-Pin TO-252 DMN6040SK3-13
- RS Stock No.:
- 790-4609
- Mfr. Part No.:
- DMN6040SK3-13
- Brand:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.31 67
(exc. VAT)
Kr.39 59
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 1 790 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | Kr. 3,167 | Kr. 31,67 |
| 50 - 120 | Kr. 3,002 | Kr. 30,02 |
| 130 - 620 | Kr. 1,919 | Kr. 19,19 |
| 630 - 1250 | Kr. 1,837 | Kr. 18,37 |
| 1260 + | Kr. 1,495 | Kr. 14,95 |
*price indicative
- RS Stock No.:
- 790-4609
- Mfr. Part No.:
- DMN6040SK3-13
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMN6040SK3 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 22.4nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 42W | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.2 mm | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Length | 6.7mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMN6040SK3 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 22.4nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 42W | ||
Maximum Operating Temperature 150°C | ||
Width 6.2 mm | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Length 6.7mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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