onsemi NTR0202PL Type P-Channel MOSFET, 400 mA, 20 V Enhancement, 3-Pin SOT-23 NTR0202PLT1G
- RS Stock No.:
- 791-6299
- Mfr. Part No.:
- NTR0202PLT1G
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 50 units)*
Kr. 183,85
(exc. VAT)
Kr. 229,80
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 1 950 unit(s) shipping from 02 March 2026
- Plus 9 000 unit(s) shipping from 06 May 2026
- Plus 6 000 unit(s) shipping from 03 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 50 | Kr. 3,677 | Kr. 183,85 |
| 100 - 200 | Kr. 2,00 | Kr. 100,00 |
| 250 - 450 | Kr. 1,679 | Kr. 83,95 |
| 500 - 950 | Kr. 1,508 | Kr. 75,40 |
| 1000 + | Kr. 1,265 | Kr. 63,25 |
*price indicative
- RS Stock No.:
- 791-6299
- Mfr. Part No.:
- NTR0202PLT1G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 400mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | NTR0202PL | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 550mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 225mW | |
| Typical Gate Charge Qg @ Vgs | 2.18nC | |
| Forward Voltage Vf | -1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Height | 1.01mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 400mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series NTR0202PL | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 550mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 225mW | ||
Typical Gate Charge Qg @ Vgs 2.18nC | ||
Forward Voltage Vf -1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Height 1.01mm | ||
Automotive Standard No | ||
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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