Infineon BSS Type P-Channel MOSFET, 0.28 A, 40 V Enhancement, 3-Pin SOT-323

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Subtotal (1 reel of 3000 units)*

Kr.1 284 00 

(exc. VAT)

Kr.1 605 00 

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +Kr. 0,428Kr. 1 284,00

*price indicative

RS Stock No.:
250-0553
Mfr. Part No.:
BSS209PWH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

0.28A

Maximum Drain Source Voltage Vds

40V

Package Type

SOT-323

Series

BSS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon makes P-channel with enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free. This device is OptiMOS-P Small-Signal-Transistor with super logic level of 2.5 V (rated). The operating temperature is 150°C. It is Avalanche and dv /dt rated. It is Pb-free with lead plating, Halogen-free.

VDS is -20 V, RDS(on),max 550 mΩ and Id is -0.63 A

Maximum power dissipation is 500mW

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