Infineon BSS Type P-Channel MOSFET, 0.15 A, 30 V Enhancement, 3-Pin SOT-23 BSS315PH6327XTSA1
- RS Stock No.:
- 250-0558
- Mfr. Part No.:
- BSS315PH6327XTSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.26 87
(exc. VAT)
Kr.33 59
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 8 180 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 2,687 | Kr. 26,87 |
| 100 - 240 | Kr. 2,563 | Kr. 25,63 |
| 250 - 490 | Kr. 1,739 | Kr. 17,39 |
| 500 - 990 | Kr. 1,613 | Kr. 16,13 |
| 1000 + | Kr. 1,213 | Kr. 12,13 |
*price indicative
- RS Stock No.:
- 250-0558
- Mfr. Part No.:
- BSS315PH6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 0.15A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | BSS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 0.15A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series BSS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon makes P-channel with enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free. The OptiMOS P 2 Small Signal-Transistor. The Logic level 4.5V rated, avalanche rated.
Logic level is 4.5V rated
100% lead-free, and Halogen-free
Maximum power dissipation is 500mW
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