Infineon BSS Type N-Channel MOSFET, 0.28 A, 40 V Enhancement, 3-Pin SOT-323

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Subtotal (1 reel of 3000 units)*

Kr.1 740 00 

(exc. VAT)

Kr.2 160 00 

(inc. VAT)

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  • 12 000 unit(s) ready to ship
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Units
Per unit
Per Reel*
3000 - 3000Kr. 0,58Kr. 1 740,00
6000 - 12000Kr. 0,551Kr. 1 653,00
15000 +Kr. 0,528Kr. 1 584,00

*price indicative

RS Stock No.:
250-0541
Mfr. Part No.:
BSS138WH6327XTSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

0.28A

Maximum Drain Source Voltage Vds

40V

Package Type

SOT-323

Series

BSS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

80nC

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon makes SIPMOS Small-Signal-Transistor, N-channel, Enhancement mode. The device is dv /dt rated and Pb-free lead-plating. It has Vds of 60 V, Rds(on)max is 3.5 Ω and Id is 0.28 A. It is Halogen-free, P-channel Enhancement mode transistor widely used in high-switching applications. It is avalanche rated and halogen-free.

100% lead-free

Maximum power dissipation is 360mW

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