Infineon BSS N-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin SOT-323 BSS138WH6327XTSA1

RS Stock No.:: 250-0541
Mfr. Part No.:: BSS138WH6327XTSA1
Brand:: Infineon

Infineon BSS N-Channel MOSFET, 280 mA, 60 V Enhancement, 3-Pin SOT-323 BSS138WH6327XTSA1

Bulk discount available

View bulk pricing options

Subtotal (1 reel of 3000 units)*

Kr. 1 704,00

(exc. VAT)

Kr. 2 130,00

(inc. VAT)

Stock information currently inaccessible - Please check back later

Units	Per unit	Per Reel*
3000 - 3000	Kr. 0,568	Kr. 1 704,00
6000 - 12000	Kr. 0,54	Kr. 1 620,00
15000 +	Kr. 0,517	Kr. 1 551,00

*price indicative

RS Stock No.:: 250-0541
Mfr. Part No.:: BSS138WH6327XTSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	280mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-323
	Series	BSS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	6000mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Power Dissipation Pd	81W
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	80nC
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 280mA
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-323
	Series BSS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 6000mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Power Dissipation Pd 81W
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 80nC
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Automotive Standard AEC-Q101

Datasheet - BSS138WH6327XTSA1

Infineon BSS Series MOSFET, 60V Maximum Drain-Source Voltage, 81W Maximum Power Dissipation - BSS138WH6327XTSA1

This n-channel enhancement device is a Compact surface-mount transistor designed for switching and amplification in constrained assemblies. It operates over a wide thermal range and is suited to environments requiring elevated temperature tolerance and standardised automotive qualification. The package facilitates automated soldering onto board assemblies where small-signal handling and thermal performance are required.

Features and Benefits:

• 60V maximum drain-source voltage enables higher-voltage switching capability
• 6000mΩ drain-source resistance reduces conduction losses for small currents
• 0.28A continuous drain current supports low-current signal paths
• 81W power-dissipation rating allows short-duration power handling
• +150°C maximum operating temperature sustains high-temperature operation

Applications

• Suitable for signal switching in Compact control modules
• Ideal for surface-mount power-management circuits on boards
• Used with automotive electronics requiring AEC‑Q101 qualification
• Can be used for low-current load drivers in portable devices

What are the permissible gate-voltage limits?

The gate may be driven up to 20V relative to the source before gate constraints are exceeded.

How does gate charge affect drive requirements?

An 80 nC typical gate charge at rated drive implies moderate transient energy is required from the gate driver.

What thermal extremes can the device withstand?

It operates down to -55°C and up to +150°C for broad environmental capability.