IXYS Single HiperFET, Q3-Class 1 Type N-Channel MOSFET, 82 A, 600 V Enhancement, 3-Pin PLUS264 IXFB82N60Q3

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Subtotal (1 unit)*

Kr.441 40 

(exc. VAT)

Kr.551 75 

(inc. VAT)

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1 - 4Kr. 441,40
5 - 9Kr. 402,34
10 - 24Kr. 392,16
25 +Kr. 360,59

*price indicative

Packaging Options:
RS Stock No.:
801-1370
Mfr. Part No.:
IXFB82N60Q3
Brand:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

82A

Maximum Drain Source Voltage Vds

600V

Series

HiperFET, Q3-Class

Package Type

PLUS264

Mount Type

Through Hole

Pin Count

3

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Transistor Configuration

Single

Width

5.31 mm

Length

20.29mm

Height

26.59mm

Number of Elements per Chip

1

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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