N-Channel MOSFET, 45 A, 500 V, 3-Pin ISOPLUS247 IXYS IXFR64N50Q3

RS Stock No.:: 801-1452
Mfr. Part No.:: IXFR64N50Q3
Brand:: IXYS

N-Channel MOSFET, 45 A, 500 V, 3-Pin ISOPLUS247 IXYS IXFR64N50Q3

8 In stock for same day dispatch

Added

Price Each

Kr. 324,50

(exc. VAT)

Kr. 405,62

(inc. VAT)

Units	Per unit
1 - 4	Kr. 324,50
5 - 9	Kr. 280,06
10 - 24	Kr. 264,11
25 +	Kr. 255,20

RS Stock No.:: 801-1452
Mfr. Part No.:: IXFR64N50Q3
Brand:: IXYS

Technical Reference

Legislation and Compliance

Product Details

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series

The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density

MOSFET Transistors, IXYS

A wide range of advanced discrete Power MOSFET devices from IXYS

Specifications

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	45 A
Maximum Drain Source Voltage	500 V
Package Type	ISOPLUS247
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	94 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	6.5V
Maximum Power Dissipation	500 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Transistor Material	Si
Number of Elements per Chip	1
Width	5.21mm
Maximum Operating Temperature	+150 °C
Length	16.13mm
Typical Gate Charge @ Vgs	145 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	21.34mm
Series	HiperFET, Q3-Class

RS Stock No.:: 801-1452
Mfr. Part No.:: IXFR64N50Q3
Brand:: IXYS