IXYS Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin TO-264

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Subtotal (1 tube of 25 units)*

Kr.5 006 50 

(exc. VAT)

Kr.6 258 00 

(inc. VAT)

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Units
Per unit
Per Tube*
25 +Kr. 200,26Kr. 5 006,50

*price indicative

RS Stock No.:
920-0978
Mfr. Part No.:
IXFK48N60Q3
Brand:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

48A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-264

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

140mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

140nC

Maximum Power Dissipation Pd

1kW

Forward Voltage Vf

1.4V

Maximum Operating Temperature

150°C

Width

5.13 mm

Length

19.96mm

Height

26.16mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS HiperFET™ Q3 Series


The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.

Fast intrinsic rectifier diode

Low RDS(on) and QG (gate charge)

Low intrinsic gate resistance

Industry standard packages

Low package inductance

High power density

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

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