IXYS Type N-Channel MOSFET, 64 A, 500 V Enhancement, 3-Pin PLUS247 IXFX64N50Q3
- RS Stock No.:
- 801-1503
- Distrelec Article No.:
- 302-53-408
- Mfr. Part No.:
- IXFX64N50Q3
- Brand:
- IXYS
Bulk discount available
Subtotal (1 unit)*
Kr.218 39
(exc. VAT)
Kr.272 99
(inc. VAT)
FREE delivery for online orders over 500,00 kr
In Stock
- Plus 26 unit(s) shipping from 29. desember 2025
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Units | Per unit |
|---|---|
| 1 - 9 | Kr. 218,39 |
| 10 - 19 | Kr. 185,90 |
| 20 - 49 | Kr. 177,78 |
| 50 - 249 | Kr. 171,71 |
| 250 + | Kr. 167,94 |
*price indicative
- RS Stock No.:
- 801-1503
- Distrelec Article No.:
- 302-53-408
- Mfr. Part No.:
- IXFX64N50Q3
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 64A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | PLUS247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 85mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 1kW | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Length | 16.13mm | |
| Height | 21.34mm | |
| Width | 5.21 mm | |
| Standards/Approvals | No | |
| Distrelec Product Id | 30253408 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 64A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type PLUS247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 85mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 1kW | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Length 16.13mm | ||
Height 21.34mm | ||
Width 5.21 mm | ||
Standards/Approvals No | ||
Distrelec Product Id 30253408 | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
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- IXYS HiperFET 82 A 4-Pin SOT-227 IXFN100N50Q3
- IXYS HiperFET 45 A 3-Pin ISOPLUS247 IXFR64N50Q3
- IXYS HiperFET 63 A 4-Pin SOT-227 IXFN80N50Q3