onsemi UltraFET Type N-Channel MOSFET, 18 A, 60 V Enhancement, 3-Pin TO-252 RFD12N06RLESM9A

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Subtotal (1 pack of 10 units)*

Kr.80 08 

(exc. VAT)

Kr.100 10 

(inc. VAT)

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Last RS stock
  • Final 1 890 unit(s), ready to ship
Units
Per unit
Per Pack*
10 - 90Kr. 8,008Kr. 80,08
100 - 240Kr. 5,995Kr. 59,95
250 - 490Kr. 5,949Kr. 59,49
500 - 990Kr. 5,079Kr. 50,79
1000 +Kr. 4,141Kr. 41,41

*price indicative

Packaging Options:
RS Stock No.:
802-2143
Mfr. Part No.:
RFD12N06RLESM9A
Brand:
onsemi
Find similar products by selecting one or more attributes.
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Brand

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

18A

Maximum Drain Source Voltage Vds

60V

Series

UltraFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

75mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

12nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

49W

Maximum Gate Source Voltage Vgs

16 V

Maximum Operating Temperature

175°C

Height

2.39mm

Length

6.73mm

Standards/Approvals

No

Width

6.22 mm

Automotive Standard

No

UltraFET® MOSFET, Fairchild Semiconductor


UItraFET® Trench MOSFET combine characteristics that enable Benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.

Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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