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IXYS HiperFET, Polar3 N-Channel MOSFET, 192 A, 300 V Enhancement, 4-Pin SOT-227

Name: IXYS HiperFET, Polar3 N-Channel MOSFET, 192 A, 300 V Enhancement, 4-Pin SOT-227
Brand: IXYS
SKU: 804-7593
Availability: InStock

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Kr. 542,14

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Kr. 677,68

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Specifications

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Product Details

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Select all	Attribute	Value
	Brand	IXYS
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	192A
	Maximum Drain Source Voltage Vds	300V
	Package Type	SOT-227
	Series	HiperFET, Polar3
	Mount Type	Panel
	Pin Count	4
	Maximum Drain Source Resistance Rds	14.5mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	268nC
	Maximum Power Dissipation Pd	1.5kW
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Forward Voltage Vf	1.5V
	Maximum Operating Temperature	150°C
	Length	38.23mm
	Height	9.6mm
	Width	25.07mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand IXYS
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 192A
	Maximum Drain Source Voltage Vds 300V
	Package Type SOT-227
	Series HiperFET, Polar3
	Mount Type Panel
	Pin Count 4
	Maximum Drain Source Resistance Rds 14.5mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 268nC
	Maximum Power Dissipation Pd 1.5kW
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs -20V, +20V
	Forward Voltage Vf 1.5V
	Maximum Operating Temperature 150°C
	Length 38.23mm
	Height 9.6mm
	Width 25.07mm
	Standards/Approvals No
	Automotive Standard No

A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

A wide range of advanced discrete Power MOSFET devices from IXYS

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