IXYS HiperFET Type N-Channel MOSFET, 145 A, 650 V Enhancement, 4-Pin SOT-227

View all MOSFETs
Bulk discount available

Subtotal (1 unit)*

Kr.571 37 

(exc. VAT)

Kr.714 21 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 13 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 4Kr. 571,37
5 +Kr. 511,25

*price indicative

RS Stock No.:
146-4398
Distrelec Article No.:
302-53-364
Mfr. Part No.:
IXFN150N65X2
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

145A

Maximum Drain Source Voltage Vds

650V

Package Type

SOT-227

Series

HiperFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

17mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

1.04kW

Forward Voltage Vf

1.4V

Typical Gate Charge Qg @ Vgs

335nC

Maximum Operating Temperature

150°C

Length

38.23mm

Width

25.07 mm

Height

9.6mm

Standards/Approvals

No

Distrelec Product Id

30253364

Automotive Standard

No

Low RDS(ON) and Qg

Fast body diode

dv/dt ruggedness

Avalanche rated

Low package inductance

International standard packages

Resonant mode power supplies

High intensity discharge (HID) lamp ballast

AC and DC motor drives

DC-DC converters

Robotic and servo control

Battery chargers

3-level solar inverters

LED lighting

Unmanned Aerial Vehicles (UAVs)

Higher efficiency

High power density

Easy to mount

Space savings

Related links