IXYS HiperFET Type N-Channel MOSFET, 24 A, 1 kV Enhancement, 4-Pin SOT-227

View all MOSFETs

Subtotal (1 tube of 10 units)*

Kr.5 048 24 

(exc. VAT)

Kr.6 310 30 

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 80 unit(s) shipping from 25. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
10 +Kr. 504,824Kr. 5 048,24

*price indicative

RS Stock No.:
146-1694
Mfr. Part No.:
IXFN24N100
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

1kV

Series

HiperFET

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

390mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

267nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

568W

Maximum Operating Temperature

150°C

Height

9.6mm

Length

38.23mm

Width

25.42 mm

Standards/Approvals

No

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Series


MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

Related links