IXYS HiperFET Type N-Channel MOSFET, 24 A, 1 kV Enhancement, 4-Pin SOT-227

Subtotal (1 tube of 10 units)*

Kr. 5 048,24

(exc. VAT)

Kr. 6 310,30

(inc. VAT)

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Units
Per unit
Per Tube*
10 +Kr. 504,824Kr. 5 048,24

*price indicative

RS Stock No.:
146-1694
Mfr. Part No.:
IXFN24N100
Brand:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

1kV

Package Type

SOT-227

Series

HiperFET

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

390mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

267nC

Maximum Power Dissipation Pd

568W

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

9.6mm

Length

38.23mm

Standards/Approvals

No

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Series


MOSFET Transistors, IXYS


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