IXYS HiperFET Type N-Channel MOSFET, 24 A, 1 kV Enhancement, 4-Pin SOT-227

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Subtotal (1 tube of 10 units)*

Kr.5 048 24 

(exc. VAT)

Kr.6 310 30 

(inc. VAT)

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  • 80 unit(s) ready to ship
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Units
Per unit
Per Tube*
10 +Kr. 504,824Kr. 5 048,24

*price indicative

RS Stock No.:
146-1694
Mfr. Part No.:
IXFN24N100
Brand:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

1kV

Series

HiperFET

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

390mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

267nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

568W

Maximum Operating Temperature

150°C

Height

9.6mm

Length

38.23mm

Width

25.42 mm

Standards/Approvals

No

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Series


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