IXYS HiperFET Type N-Channel MOSFET, 36 A, 1 kV Enhancement, 4-Pin SOT-227 IXFN36N100

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Subtotal (1 unit)*

Kr.873 44 

(exc. VAT)

Kr.1 091 80 

(inc. VAT)

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  • 19 unit(s) shipping from 29. april 2026
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1 - 1Kr. 873,44
2 - 4Kr. 829,74
5 +Kr. 786,16

*price indicative

RS Stock No.:
193-795
Mfr. Part No.:
IXFN36N100
Brand:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

36A

Maximum Drain Source Voltage Vds

1kV

Series

HiperFET

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

240mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

700W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

380nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

25.42 mm

Height

9.6mm

Length

38.23mm

Automotive Standard

No

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