IXYS HiperFET Type N-Channel MOSFET, 24 A, 1 kV Enhancement, 4-Pin SOT-227 IXFN24N100

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Subtotal (1 unit)*

Kr.581 38 

(exc. VAT)

Kr.726 72 

(inc. VAT)

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1 - 4Kr. 581,38
5 - 19Kr. 511,14
20 - 49Kr. 477,28
50 - 99Kr. 465,15
100 +Kr. 453,48

*price indicative

RS Stock No.:
194-091
Mfr. Part No.:
IXFN24N100
Brand:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

1kV

Package Type

SOT-227

Series

HiperFET

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

390mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

267nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

568W

Forward Voltage Vf

1.5V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

9.6mm

Width

25.42 mm

Length

38.23mm

Automotive Standard

No

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