IXYS HiperFET Type N-Channel MOSFET, 36 A, 1 kV Enhancement, 4-Pin SOT-227

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Subtotal (1 tube of 10 units)*

Kr.7 914 31 

(exc. VAT)

Kr.9 892 89 

(inc. VAT)

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Temporarily out of stock
  • 10 unit(s) shipping from 29. april 2026
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Units
Per unit
Per Tube*
10 +Kr. 791,431Kr. 7 914,31

*price indicative

RS Stock No.:
168-4473
Mfr. Part No.:
IXFN36N100
Brand:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

36A

Maximum Drain Source Voltage Vds

1kV

Series

HiperFET

Package Type

SOT-227

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

240mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

380nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

700W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.3V

Maximum Operating Temperature

150°C

Height

9.6mm

Length

38.23mm

Width

25.42 mm

Standards/Approvals

No

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ Series


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