IXYS HiperFET Type N-Channel MOSFET, 90 A, 850 V Enhancement, 4-Pin SOT-227 IXFN90N85X

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Subtotal (1 tube of 10 units)*

Kr.6 175 43 

(exc. VAT)

Kr.7 719 29 

(inc. VAT)

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Units
Per unit
Per Tube*
10 +Kr. 617,543Kr. 6 175,43

*price indicative

RS Stock No.:
146-4248
Mfr. Part No.:
IXFN90N85X
Brand:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

850V

Package Type

SOT-227

Series

HiperFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

41mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

1.2kW

Typical Gate Charge Qg @ Vgs

340nC

Forward Voltage Vf

1.4V

Maximum Operating Temperature

150°C

Height

9.6mm

Standards/Approvals

No

Length

38.23mm

Width

25.07 mm

Automotive Standard

No

The 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes represent a new power semiconductor product line from IXYS Corporation. These rugged devices display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, the new 850V devices exhibit the lowest on-state resistances (33 milliohm in the SOT-227 package and 41 milliohm in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.

Ultra low on-resistance RDS(ON) and gate charge Qg

Fast body diode

dv/dt ruggedness

Avalanche rated

Low package inductance

International standard packages

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