IXYS HiperFET Type N-Channel MOSFET, 90 A, 850 V Enhancement, 3-Pin PLUS264
- RS Stock No.:
- 146-4383
- Distrelec Article No.:
- 302-53-305
- Mfr. Part No.:
- IXFB90N85X
- Brand:
- IXYS
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
Kr. 323,41
(exc. VAT)
Kr. 404,26
(inc. VAT)
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- 23 unit(s) shipping from 01 June 2026
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Units | Per unit |
|---|---|
| 1 - 4 | Kr. 323,41 |
| 5 - 9 | Kr. 307,39 |
| 10 + | Kr. 299,16 |
*price indicative
- RS Stock No.:
- 146-4383
- Distrelec Article No.:
- 302-53-305
- Mfr. Part No.:
- IXFB90N85X
- Brand:
- IXYS
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 90A | |
| Maximum Drain Source Voltage Vds | 850V | |
| Package Type | PLUS264 | |
| Series | HiperFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 41mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.79kW | |
| Typical Gate Charge Qg @ Vgs | 340nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Height | 26.59mm | |
| Length | 20.29mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 90A | ||
Maximum Drain Source Voltage Vds 850V | ||
Package Type PLUS264 | ||
Series HiperFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 41mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.79kW | ||
Typical Gate Charge Qg @ Vgs 340nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Height 26.59mm | ||
Length 20.29mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes represent a new power semiconductor product line from IXYS Corporation. These rugged devices display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, the new 850V devices exhibit the lowest on-state resistances (33 milliohm in the SOT-227 package and 41 milliohm in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.
Ultra low on-resistance RDS(ON) and gate charge Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Related links
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 3-Pin PLUS264 IXFB90N85X
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 4-Pin SOT-227 IXFN90N85X
- IXYS HiperFET 132 A 3-Pin PLUS264
- IXYS HiperFET 210 A 3-Pin PLUS264
- IXYS HiperFET 110 A 3-Pin PLUS264
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 3-Pin TO-264 IXFK66N85X
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