IXYS Type N-Channel MOSFET, 210 A, 300 V Enhancement, 3-Pin PLUS264

View all MOSFETs

Subtotal (1 tube of 25 units)*

Kr.7 044 525 

(exc. VAT)

Kr.8 805 65 

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 12. oktober 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Tube*
25 +Kr. 281,781Kr. 7 044,53

*price indicative

RS Stock No.:
920-0987
Mfr. Part No.:
IXFB210N30P3
Brand:
IXYS
Find similar products by selecting one or more attributes.
Select all

Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

210A

Maximum Drain Source Voltage Vds

300V

Package Type

PLUS264

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

14.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

268nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.5V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

1.89kW

Maximum Operating Temperature

150°C

Height

26.59mm

Length

20.29mm

Standards/Approvals

No

Width

5.31 mm

Automotive Standard

No

COO (Country of Origin):
US

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series


A range of IXYS Polar3™ series N-channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™)

MOSFET Transistors, IXYS


A wide range of advanced discrete Power MOSFET devices from IXYS

Related links