Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 1.3 A, 20 V Enhancement, 6-Pin SC-88 SI1922EDH-T1-GE3

Subtotal (1 pack of 50 units)*

Kr. 170,20

(exc. VAT)

Kr. 212,75

(inc. VAT)

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  • 2 850 unit(s) ready to ship
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Units
Per unit
Per Pack*
50 +Kr. 3,404Kr. 170,20

*price indicative

Packaging Options:
RS Stock No.:
812-3091
Mfr. Part No.:
SI1922EDH-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

1.3A

Maximum Drain Source Voltage Vds

20V

Package Type

SC-88

Series

TrenchFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

263mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

1.6nC

Maximum Power Dissipation Pd

1.25W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Length

2.2mm

Height

1mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

Dual N-Channel MOSFET, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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