Vishay Si7121DN Type P-Channel MOSFET, 9.6 A, 30 V Enhancement, 8-Pin PowerPAK 1212 SI7121DN-T1-GE3
- RS Stock No.:
- 818-1380
- Mfr. Part No.:
- SI7121DN-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.120 23
(exc. VAT)
Kr.150 29
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Last RS stock
- Final 3 740 unit(s), ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | Kr. 12,023 | Kr. 120,23 |
| 100 - 240 | Kr. 9,61 | Kr. 96,10 |
| 250 - 490 | Kr. 7,459 | Kr. 74,59 |
| 500 - 990 | Kr. 6,601 | Kr. 66,01 |
| 1000 + | Kr. 5,64 | Kr. 56,40 |
*price indicative
- RS Stock No.:
- 818-1380
- Mfr. Part No.:
- SI7121DN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.6A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | Si7121DN | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 26mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 27.8W | |
| Minimum Operating Temperature | -50°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.07mm | |
| Width | 3.15 mm | |
| Length | 3.15mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.6A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series Si7121DN | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 26mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 27.8W | ||
Minimum Operating Temperature -50°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.07mm | ||
Width 3.15 mm | ||
Length 3.15mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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