Quad N/P-Channel-Channel MOSFET, 2.5 A, 7.8 A, 30 V, 8-Pin SOIC Diodes Inc DMHC3025LSD-13

RS Stock No.:: 823-3211P
Mfr. Part No.:: DMHC3025LSD-13
Brand:: DiodesZetex

Quad N/P-Channel-Channel MOSFET, 2.5 A, 7.8 A, 30 V, 8-Pin SOIC Diodes Inc DMHC3025LSD-13

Price Each (Supplied on a Reel) Quantities below 150 on continuous strip

Kr. 3,929

(exc. VAT)

Kr. 4,911

(inc. VAT)

24070 In stock for same day dispatch

Units	Per unit
10 +	Kr. 3,929

RS Stock No.:: 823-3211P
Mfr. Part No.:: DMHC3025LSD-13
Brand:: DiodesZetex

30v Complementary Enhancement Mode Mosfet H-Bridge Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	2.5 A, 7.8 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	40 mΩ, 80 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Maximum Power Dissipation	1.5 W
Transistor Configuration	Full Bridge
Maximum Gate Source Voltage	-20 V, +20 V
Length	4.95mm
Number of Elements per Chip	4
Maximum Operating Temperature	+150 °C
Width	3.95mm
Transistor Material	Si
Typical Gate Charge @ Vgs	11.4 nC @ 10 V, 11.7 nC @ 10 V
Minimum Operating Temperature	-55 °C
Height	1.5mm

Quad N/P-Channel-Channel MOSFET, 2.5 A, 7.8 A, 30 V, 8-Pin SOIC Diodes Inc DMHC3025LSD-13

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.