Infineon SIPMOS® P-Channel MOSFET, 4.2 A, 100 V, 3-Pin DPAK SPD04P10PLGBTMA1

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Subtotal (1 pack of 50 units)*

Kr. 372,90

(exc. VAT)

Kr. 466,10

(inc. VAT)

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Units
Per unit
Per Pack*
50 - 200Kr. 7,458Kr. 372,90
250 - 950Kr. 4,87Kr. 243,50
1000 - 2450Kr. 3,803Kr. 190,15
2500 +Kr. 3,201Kr. 160,05

*price indicative

Packaging Options:
RS Stock No.:
826-9064
Mfr. Part No.:
SPD04P10PLGBTMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

4.2 A

Maximum Drain Source Voltage

100 V

Series

SIPMOS®

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.05 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.73mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

12 nC @ 10 V

Transistor Material

Si

Width

6.22mm

Minimum Operating Temperature

-55 °C

Height

2.41mm

RoHS Status: Not Applicable

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