Infineon SIPMOS® P-Channel MOSFET, 4.2 A, 100 V, 3-Pin DPAK SPD04P10PLGBTMA1

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

4.2 A

Maximum Drain Source Voltage

100 V

Series

SIPMOS®

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.05 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

12 nC @ 10 V

Length

6.73mm

Maximum Operating Temperature

+175 °C

Width

6.22mm

Height

2.41mm

Minimum Operating Temperature

-55 °C