Infineon OptiMOS P Type P-Channel Power Transistor, 120 A, 40 V Enhancement, 3-Pin TO-263 IPB120P04P4L03ATMA1
- RS Stock No.:
- 826-9092
- Mfr. Part No.:
- IPB120P04P4L03ATMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
Kr.341 03
(exc. VAT)
Kr.426 29
(inc. VAT)
FREE delivery for online orders over 500,00 kr
Temporarily out of stock
- 3 790 unit(s) shipping from 29. desember 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 10 | Kr. 34,103 | Kr. 341,03 |
| 20 - 40 | Kr. 32,398 | Kr. 323,98 |
| 50 - 90 | Kr. 31,037 | Kr. 310,37 |
| 100 - 240 | Kr. 29,664 | Kr. 296,64 |
| 250 + | Kr. 27,628 | Kr. 276,28 |
*price indicative
- RS Stock No.:
- 826-9092
- Mfr. Part No.:
- IPB120P04P4L03ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | OptiMOS P | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Maximum Power Dissipation Pd | 136W | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.4mm | |
| Standards/Approvals | RoHS | |
| Length | 10mm | |
| Width | 9.25 mm | |
| Automotive Standard | AEC-Q | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series OptiMOS P | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Maximum Power Dissipation Pd 136W | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.4mm | ||
Standards/Approvals RoHS | ||
Length 10mm | ||
Width 9.25 mm | ||
Automotive Standard AEC-Q | ||
RoHS Status: Not Applicable
Infineon OptiMOS™P P-Channel Power MOSFETs
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode
Avalanche rated
Low switching and conduction power losses
Pb-free lead plating; RoHS compliant
Standard packages
OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS P P-Channel MOSFET 40 V, 3-Pin D2PAK IPB120P04P4L03ATMA1
- Infineon OptiMOS P P-Channel MOSFET 40 V, 3-Pin TO-220 IPP120P04P4L03AKSA1
- Infineon OptiMOS P P-Channel MOSFET 40 V, 3-Pin D2PAK IPB70P04P409ATMA1
- Infineon OptiMOS P P-Channel MOSFET 40 V, 3-Pin D2PAK IPB80P04P4L04ATMA1
- Infineon OptiMOS P P-Channel MOSFET 40 V, 3-Pin D2PAK IPB80P04P405ATMA1
- Infineon OptiMOS P P-Channel MOSFET 40 V, 3-Pin D2PAK IPB80P04P4L06ATMA1
- Infineon OptiMOS P P-Channel MOSFET 40 V, 3-Pin D2PAK IPB80P04P407ATMA1
- Infineon OptiMOS P P-Channel MOSFET 30 V, 3-Pin D2PAK IPB45P03P4L11ATMA1