N-Channel MOSFET, 110 mA, 240 V, 3-Pin SOT-23 Infineon BSS131H6327XTSA1
- RS Stock No.:
- 827-0070
- Mfr. Part No.:
- BSS131H6327XTSA1
- Brand:
- Infineon
Available to back order for despatch 02.09.2024
Added
Price Each (On a Reel of 250)
Kr. 2,023
(exc. VAT)
Kr. 2,529
(inc. VAT)
| Units | Per unit | Per Reel* |
| 250 - 250 | Kr. 2,023 | Kr. 505,75 |
| 500 - 1000 | Kr. 1,072 | Kr. 268,00 |
| 1250 - 2250 | Kr. 1,012 | Kr. 253,00 |
| 2500 - 6000 | Kr. 0,931 | Kr. 232,75 |
| 6250 + | Kr. 0,87 | Kr. 217,50 |
| *price indicative | ||
- RS Stock No.:
- 827-0070
- Mfr. Part No.:
- BSS131H6327XTSA1
- Brand:
- Infineon
Legislation and Compliance
Product Details
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 110 mA |
| Maximum Drain Source Voltage | 240 V |
| Series | SIPMOS |
| Package Type | SOT-23 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 20 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.8V |
| Minimum Gate Threshold Voltage | 0.8V |
| Maximum Power Dissipation | 360 mW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 1.3mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 2.1 nC @ 10 V |
| Length | 2.9mm |
| Transistor Material | Si |
| Height | 1mm |
| Minimum Operating Temperature | -55 °C |
- RS Stock No.:
- 827-0070
- Mfr. Part No.:
- BSS131H6327XTSA1
- Brand:
- Infineon