N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 Toshiba TK31E60W,S1VX(S

RS Stock No.:: 827-6182P
Mfr. Part No.:: TK31E60W,S1VX(S
Brand:: Toshiba

N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 Toshiba TK31E60W,S1VX(S

12 In stock for same day dispatch

Price Each (Supplied in a Bag)

Kr. 48,55

(exc. VAT)

Kr. 60,69

(inc. VAT)

Units	Per unit
10 - 18	Kr. 48,55
20 - 48	Kr. 42,33
50 - 98	Kr. 39,605
100 +	Kr. 37,885

RS Stock No.:: 827-6182P
Mfr. Part No.:: TK31E60W,S1VX(S
Brand:: Toshiba

TK31E60W, MOSFET Silicon N-Channel MOS (DTMOS IV)
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	31 A
Maximum Drain Source Voltage	600 V
Package Type	TO-220
Series	TK
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	88 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.7V
Maximum Power Dissipation	230 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Number of Elements per Chip	1
Width	4.45mm
Length	10.16mm
Typical Gate Charge @ Vgs	86 nC @ 10 V
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Height	15.1mm

N-Channel MOSFET, 31 A, 600 V, 3-Pin TO-220 Toshiba TK31E60W,S1VX(S

MOSFET N-Channel, TK3x Series, Toshiba