Infineon OptiMOS P P-Channel MOSFET, 80 A, 40 V, 3-Pin D2PAK IPB80P04P4L04ATMA1

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

40 V

Package Type

D2PAK (TO-263)

Series

OptiMOS P

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Number of Elements per Chip

1

Width

9.25mm

Typical Gate Charge @ Vgs

135 nC @ 10 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10mm

Minimum Operating Temperature

-55 °C

Height

4.4mm