Infineon OptiMOS T2 N-Channel MOSFET, 80 A, 40 V, 3-Pin I2PAK IPI80N04S404AKSA1

RS Stock No.:: 857-6763
Mfr. Part No.:: IPI80N04S404AKSA1
Brand:: Infineon

Infineon OptiMOS T2 N-Channel MOSFET, 80 A, 40 V, 3-Pin I2PAK IPI80N04S404AKSA1

Bulk discount available

Subtotal (1 tube of 500 units)*

Kr.4 188 50

(exc. VAT)

Kr.5 235 50

(inc. VAT)

Stock information currently inaccessible

Units	Per unit	Per Tube*
500 - 2000	Kr. 8,377	Kr. 4 188,50
2500 - 4500	Kr. 7,316	Kr. 3 658,00
5000 +	Kr. 7,133	Kr. 3 566,50

*price indicative

RS Stock No.:: 857-6763
Mfr. Part No.:: IPI80N04S404AKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	80 A
	Maximum Drain Source Voltage	40 V
	Series	OptiMOS T2
	Package Type	I2PAK (TO-262)
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	4.6 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	71 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Number of Elements per Chip	1
	Transistor Material	Si
	Length	10mm
	Maximum Operating Temperature	+175 °C
	Width	4.4mm
	Typical Gate Charge @ Vgs	33 nC @ 10 V
	Minimum Operating Temperature	-55 °C
	Height	9.25mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 80 A
	Maximum Drain Source Voltage 40 V
	Series OptiMOS T2
	Package Type I2PAK (TO-262)
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 4.6 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 71 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Number of Elements per Chip 1
	Transistor Material Si
	Length 10mm
	Maximum Operating Temperature +175 °C
	Width 4.4mm
	Typical Gate Charge @ Vgs 33 nC @ 10 V
	Minimum Operating Temperature -55 °C
	Height 9.25mm

RoHS Status: Exempted

Infineon OptiMOS™ T2 Power MOSFETs

Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS T2 N-Channel MOSFET, 80 A, 40 V, 3-Pin I2PAK IPI80N04S404AKSA1

Infineon OptiMOS™ T2 Power MOSFETs

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