Infineon CoolMOS C3 N-Channel MOSFET, 6.9 A, 900 V, 3-Pin TO-220 IPP90R800C3XKSA1

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Subtotal (1 tube of 500 units)*

Kr.6 275 50 

(exc. VAT)

Kr.7 844 50 

(inc. VAT)

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Units
Per unit
Per Tube*
500 +Kr. 12,551Kr. 6 275,50

*price indicative

RS Stock No.:
857-7040
Mfr. Part No.:
IPP90R800C3XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

6.9 A

Maximum Drain Source Voltage

900 V

Series

CoolMOS C3

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

104 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

42 nC @ 10 V

Length

10.36mm

Maximum Operating Temperature

+150 °C

Width

4.57mm

Transistor Material

Si

Height

15.95mm

Minimum Operating Temperature

-55 °C

Infineon CoolMOS™C3 Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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