STMicroelectronics DeepGate, STripFET Type N-Channel MOSFET, 110 A, 100 V Enhancement, 3-Pin H2PAK

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Subtotal 10 units (supplied on a continuous strip)*

Kr. 388,40

(exc. VAT)

Kr. 485,50

(inc. VAT)

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  • Shipping from 21 September 2026
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Units
Per unit
10 - 18Kr. 38,84
20 - 48Kr. 35,005
50 - 98Kr. 31,515
100 +Kr. 29,975

*price indicative

Packaging Options:
RS Stock No.:
860-7523P
Mfr. Part No.:
STH150N10F7-2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

100V

Package Type

H2PAK

Series

DeepGate, STripFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.9mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

117nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

250W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.4mm

Width

10.57 mm

Height

4.8mm

Automotive Standard

No

N-Channel STripFET™ DeepGate™, STMicroelectronics


STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics