IXYS GigaMOS, HiperFET N-Channel MOSFET, 500 A, 75 V Enhancement, 24-Pin SMPD

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Subtotal 5 units (supplied in a tube)*

Kr. 1 375,65

(exc. VAT)

Kr. 1 719,55

(inc. VAT)

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Temporarily out of stock
  • Shipping from 17 May 2027
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Units
Per unit
5 - 9Kr. 275,13
10 - 19Kr. 263,23
20 - 79Kr. 250,76
80 +Kr. 233,26

*price indicative

Packaging Options:
RS Stock No.:
875-2471P
Mfr. Part No.:
MMIX1F520N075T2
Brand:
IXYS
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Brand

IXYS

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

500A

Maximum Drain Source Voltage Vds

75V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mount Type

Surface

Pin Count

24

Maximum Drain Source Resistance Rds

1.6mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

545nC

Forward Voltage Vf

1.25V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

830W

Maximum Gate Source Voltage Vgs

-30V, +30V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Height

5.7mm

Width

23.25mm

Length

25.25mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


MOSFET Transistors, IXYS


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