N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-3PN Toshiba TK12J60W,S1VQ(O
- RS Stock No.:
- 891-2881
- Mfr. Part No.:
- TK12J60W,S1VQ(O
- Brand:
- Toshiba
In stock for same day dispatch
Not available for next day delivery
Added
Price Each
Kr. 29,55
(exc. VAT)
Kr. 36,94
(inc. VAT)
| Units | Per unit |
| 1 - 4 | Kr. 29,55 |
| 5 - 9 | Kr. 27,89 |
| 10 - 24 | Kr. 26,33 |
| 25 - 49 | Kr. 25,00 |
| 50 + | Kr. 23,78 |
- RS Stock No.:
- 891-2881
- Mfr. Part No.:
- TK12J60W,S1VQ(O
- Brand:
- Toshiba
Technical Reference
Legislation and Compliance
- COO (Country of Origin):
- JP
Product Details
MOSFET Transistors, Toshiba
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 11.5 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | TO-3PN |
| Series | TK |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 300 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.7V |
| Maximum Power Dissipation | 110 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Number of Elements per Chip | 1 |
| Length | 15.5mm |
| Typical Gate Charge @ Vgs | 25 nC @ 10 V |
| Width | 4.5mm |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Height | 20mm |
| Forward Diode Voltage | 1.7V |
- RS Stock No.:
- 891-2881
- Mfr. Part No.:
- TK12J60W,S1VQ(O
- Brand:
- Toshiba