Infineon Single OptiMOS™ 3 1 N-Channel MOSFET, 58 A, 100 V Enhancement, 3-Pin TO-220 IPP126N10N3GXKSA1

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Subtotal (1 pack of 10 units)*

Kr. 57,96

(exc. VAT)

Kr. 72,45

(inc. VAT)

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10 +Kr. 5,796Kr. 57,96

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RS Stock No.:
892-2273
Mfr. Part No.:
IPP126N10N3GXKSA1
Brand:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

58A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS™ 3

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

23.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V, -20V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

94W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Transistor Configuration

Single

Length

10.36mm

Width

4.57mm

Height

15.95mm

Number of Elements per Chip

1

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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