Name: Infineon Single HEXFET 1 Type N-Channel MOSFET, 162 A, 40 V Enhancement, 3-Pin I2PAK IRF1404LPBF
Brand: Infineon
SKU: 913-3815
Price: 28.51 NOK
Availability: Discontinued

Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	162A
	Maximum Drain Source Voltage Vds	40V
	Package Type	I2PAK (TO-262)
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	4mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	-20/20 V
	Maximum Operating Temperature	175°C
	Transistor Configuration	Single
	Height	9.65mm
	Width	4.83 mm
	Length	10.67mm
	Number of Elements per Chip	1

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 162A
	Maximum Drain Source Voltage Vds 40V
	Package Type I2PAK (TO-262)
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 4mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs -20/20 V
	Maximum Operating Temperature 175°C
	Transistor Configuration Single
	Height 9.65mm
	Width 4.83 mm
	Length 10.67mm
	Number of Elements per Chip 1

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 162A Maximum Continuous Drain Current, 3.8W Maximum Power Dissipation - IRF1404LPBF

This MOSFET provides an efficient solution in various electronic applications, particularly where high performance is essential. Its Advanced processing techniques make it suitable for automation and electronic control systems, contributing to modern power management devices.

Features & Benefits

• Delivers a continuous drain current of 162A for robust performance

• Withstands a maximum drain-source voltage of 40V for safe operation

• Exhibits low on-resistance (RDS(on)) of 4 mΩ, enhancing energy efficiency

• Utilises enhancement mode technology for improved switching performance

• Supports through-hole mounting, facilitating integration into existing designs

Applications

• Used in high current circuits for power regulation

• Suitable for power supply designs in industrial automation

• Applied in electric motor drives and control systems

• Ideal for DC-DC converters in renewable energy systems

What is the maximum power dissipation capability?

It can handle power dissipation up to 3.8W under specific conditions, ensuring optimal performance without overheating during operation.

Is it compatible with surface mount designs?

While primarily in the I2PAK package for through-hole applications, it can be integrated into other industrial designs requiring robust components.

How should it be mounted for optimal performance?

Follow proper through-hole mounting techniques to ensure secure soldering, preventing thermal and mechanical failures during operation.

What are the implications of exceeding the specified limits?

Exceeding the continuous drain current or voltage limits may cause thermal overload or permanent damage to the device, affecting overall system reliability.

Can this component be reused after installation?

Reinstallation is possible if careful removal techniques are employed, though repeated thermal cycling may impact long-term reliability.

Infineon Single HEXFET 1 Type N-Channel MOSFET, 162 A, 40 V Enhancement, 3-Pin I2PAK IRF1404LPBF